Background and interface electron populations in InAs0.58Sb0.42

被引：22

作者：

Svensson, S. P. ^{[1
]}

Crowne, F. J. ^{[1
]}

Hier, H. S. ^{[1
]}

Sarney, W. L. ^{[1
]}

Beck, W. A. ^{[1
]}

Lin, Y. ^{[2
]}

Donetsky, D. ^{[2
]}

Suchalkin, S. ^{[2
]}

Belenky, G. ^{[2
]}

机构：

[1] US Army, Res Lab, Adelphi, MD 20783 USA

[2] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 03期

基金：

美国国家科学基金会;

关键词：

InAsSb; Hall-effect; doping; TRANSPORT-PROPERTIES; QUANTUM-WELLS; PHOTODIODES; SURFACES; DONORS;

D O I：

10.1088/0268-1242/30/3/035018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The unintentional background electron population and associated interface and surface conductivity in a heterostructure of InAs0.58Sb0.42 with a bandgap of 0.144 eV and AlInSb was studied with multi-carrier Hall-effect analysis. A free electron bulk concentration at 77 K was found with a density of 2.4 x 10(15) cm(-3) and mobility of 140 000 cm(2) V(-1)s(-1). A surface electron accumulation layer was observed with a density of 5.5 x 10(11) cm(-2) and mobility of 4500 cm(2)V(-1)s(-1) that is consistent with predictions of surface Fermi level pinning. Another accumulation layer was identified at the interface with the AlInSb of 4 x 10(11) cm(-2) with a mobility of 37 000 cm(2) V(-1)s(-1). The origin of the defects and the implications for device structures are discussed.

引用

页数：5

共 26 条

[1] DETERMINATION OF ELECTRICAL TRANSPORT-PROPERTIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE [J].