Diameter Dependence of the Transport Properties of Antimony Telluride Nanowires

被引：98

作者：

Zuev, Yuri M. ^{[1
]}

Lee, Jin Seok ^{[3
,4
]}

Galloy, Clement ^{[2
]}

Park, Hongkun ^{[3
,4
]}

Kim, Philip ^{[1
,2
]}

机构：

[1] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

[2] Columbia Univ, Dept Phys, New York, NY 10027 USA

[3] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

[4] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 08期

关键词：

Thermoelectric power; Sb2Te3; topological insulator; THERMOELECTRIC PROPERTIES; BISMUTH; PROOF;

D O I：

10.1021/nl101505q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report measurements of electronic, thermoelectric, and galvanomagnetic properties of individual single crystal antimony telluride (Sb2Te3) nanowires with diameters in the range of 20-100 nm. Temperature-dependent resistivity and thermoelectric power (TOP) measurements indicate hole dominant diffusive thermoelectric generation with an enhancement of the TOP for smaller diameter wires up to 110 mu V/K at T=300 K. We measure the magnetoresistance in magnetic fields both parallel and perpendicular to the nanowire [110] axis, where strong anisotropic positive magnetoresistance behavior was observed.

引用

页码：3037 / 3040

页数：4

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