Synthetic and effect of annealing on the luminescent properties of ZnO nanowire

被引:8
作者
Mo, Zhao-Jun [1 ]
Hao, Zhi-Hong [2 ]
Wu, Hai-Zhen [1 ]
Yang, Qing [1 ]
Zhuo, Ping [1 ]
Yang, Hui [1 ]
Xu, Jian-Ping [1 ]
Zhang, Xiao-Song [1 ]
Li, Lan [1 ]
机构
[1] Tianjin Univ Technol, Minist Educ, Inst Mat Phys, Key Lab Display Mat & Photoelect Devices, Tianjin 300191, Peoples R China
[2] Tianjin Vocat Inst, Tianjin, Peoples R China
基金
中国国家自然科学基金;
关键词
Zinc oxide; Photoluminescence; Defects; Anneal; Nanostructures; ZINC-OXIDE; THIN-FILMS; NANORODS; PHOTOLUMINESCENCE; DEPOSITION; NANOTUBES; EMISSION; DEFECTS;
D O I
10.1016/j.jlumin.2016.02.010
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
ZnO nanowires were successfully fabricated by using the hydrothermal method in the existence of the poly ethylene glycol (PEG) with the molecular weight of 200. The experimental results exhibit that the ZnO nanowires with the diameter of similar to 30 nm and the length of ten micrometers. PL spectra show a weak ultraviolet emission and an intense broad visible emission band for as-grown and annealed samples. These visible emission bands exhibit red-shifts from green (545 nm) to yellow (580 nm) and blue-shifts from yellow (580 nm) to green (520 nm) by annealing at aerobic or anaerobic environment, it indicates that the defect types are changed by annealed at different environment. Additionally, the red-shifts (520 nm) and blue-shifts (580) can match up the bimodal lorentzian fitting (520 nm and 583 nm) of as growth, which suggest that the visible emission band (545 nm) is closely related to oxygen defects. The oxygen atomic can enter into the crystal lattice of ZnO and decrease the oxygen vacancy in air or oxygen, whereas, more oxygen vacancy defects is gave rise in vacuum annealed. We guess the energy levels of the intrinsic defects in ZnO nanowire maybe like that: the electrons of Zn-i defects compound with holes of V-Zn, O-i, and O-Zn levels and conform to the yellow emission, and the green emission corresponds to the electron transition from the association defects deep donor level to the valence band. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:232 / 236
页数:5
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