Reply to comment by Maurice et al. in response to "Bragg's Law Diffraction Simulations for Electron Backscatter Diffraction Analysis"

被引:16
作者
Kacher, Josh [1 ]
Basinger, Jay [1 ]
Adams, Brent L. [1 ]
Fullwood, David T. [1 ]
机构
[1] Brigham Young Univ, Champaign, IL 61822 USA
关键词
Scanning electron microscope; EBSD; Strain; ELASTIC STRAIN-MEASUREMENT; PATTERNS;
D O I
10.1016/j.ultramic.2010.02.004
中图分类号
TH742 [显微镜];
学科分类号
摘要
A reply to Maurice et al.'s comment on "Bragg's Law Diffraction Simulations for Electron Backscatter Diffraction" is presented. A new method for microscope geometry calibration is briefly presented. Also, evidence that simple diffraction simulations can be profitable tools for absolute elastic strain measurements in crystalline materials is reiterated. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:760 / 762
页数:3
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