Simple and High-Effective Purification of Metallurgical-Grade Silicon Through Cu-Catalyzed Chemical Leaching

被引：8

作者：

Xi, Fengshuo ^{[1
,2
]}

Li, Shaoyuan ^{[1
,2
]}

Ma, Wenhui ^{[1
,2
]}

He, Zudong ^{[1
,2
]}

Geng, Chao ^{[1
,2
]}

Chen, Zhengjie ^{[1
,2
]}

Wei, Kuixian ^{[1
,2
]}

Lei, Yun ^{[1
,2
]}

Xie, Keqiang ^{[1
,2
]}

机构：

[1] Kunming Univ Sci & Technol, Fac Met & Energy Engn, State Key Lab Complex Nonferrous Met Resources Cl, Kunming 650093, Yunnan, Peoples R China

[2] Kunming Univ Sci & Technol, Inst New Energy, Silicon Met & Silicon Mat Engn Res Ctr Univ Yunna, Kunming 650093, Yunnan, Peoples R China

来源：

JOM | 2018年 / 70卷 / 10期

基金：

中国国家自然科学基金;

关键词：

POROUS SILICON; REMOVAL; BORON; IMPURITIES; DIFFUSION; ALUMINUM; VANADIUM; ACID; SLAG;

D O I：

10.1007/s11837-018-3058-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple and effective method for the removal of impurities from large-sized particle metallurgical-grade silicon (MG-Si) powders based on Cu-catalyzed chemical leaching (CuCCL) has been proposed and discussed. The leaching behaviors of the main metallic impurities (Fe, Al, Ca, Ti, Ni, V and Cu) were investigated using various leaching approaches. The typical precipitates at Si grain boundaries before and after leaching were observed and analyzed by scanning electron microscopy and energy dispersive x-ray spectroscopy. The leaching results show that the order of impurity removal efficiency, from highest to lowest, is CuCCL > HF-H2O2 leaching > HF leaching. After CuCCL, the total metal impurity concentration can be reduced from 6759 ppmw to 193.41 ppmw. The numerous micro-scale "channels" introduced by CuCCL are beneficial for the removal of impurities, especially for the non-dissolving metal impurities, such as calcium and aluminum. The results indicated that CuCCL is promising as an industrial purification method to produce solar-grade silicon.

引用

页码：2041 / 2047

页数：7

共 30 条

[1] IMPURITIES IN SILICON SOLAR-CELLS [J].