LLC Resonant Converter Based on Trench Gate SiC MOSFET

被引：0

作者：

Zhou, Yuming ^{[1
]}

Chu, Jinkun ^{[1
]}

Zhou, Jiahui ^{[1
]}

机构：

[1] Anhui Univ Technol, Sch Elect Engn, Maanshan, Peoples R China

来源：

2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021) | 2021年

关键词：

LLC resonant converter; trench-gate SiC MOSFET; efficiency;

D O I：

10.1109/WIPDAASIA51810.2021.9656066

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

LLC resonant converter is a popular topology for DC-DC converters because of its soft switching characteristics. It has many strong points for example high efficiency, high power density, and lower noise. The traditional Si MOSFET LLC resonant converter cannot continue to improve due to the limitations of the Si characteristics in terms of frequency and efficiency. This article explores the advantages of SiC MOSFET in LLC resonant converter, and compares the conversion efficiency for trench-gate SiC MOSFET, planar-gate SiC MOSFET and Si MOSFET.

引用

页码：202 / 205

页数：4

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