Nanorippling of ion irradiated GaAs (001) surface near the sputter-threshold energy

被引：22

作者：

Chowdhury, Debasree ^{[1
]}

Ghose, Debabrata ^{[1
]}

Mollick, Safiul Alam ^{[1
]}

Satpati, Biswarup ^{[1
]}

Bhattacharyya, Satya Ranjan ^{[1
]}

机构：

[1] Saha Inst Nucl Phys, Sect 1, Kolkata 700064, India

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2015年 / 252卷 / 04期

关键词：

Ehrlich-Schwoebel barrier; GaAs; ion irradiation; ripples; surfaces; MOLECULAR-BEAM EPITAXY; MONTE-CARLO; DIFFUSION; GAAS(001); DYNAMICS; GROWTH; SIMULATIONS; HOMOEPITAXY; MICROSCOPY; DEPENDENCE;

D O I：

10.1002/pssb.201451612

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the twofold symmetry of the bombarded crystal surface. The ridges of the ripples are found to align along the < 1 (1) over bar0 > direction. The results are described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact. Ripple topography on ion bombarded GaAs (001) surface: AFM image (left panel) and XTEM image (right panel). (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：811 / 815

页数：5

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