Voltage dependent characteristics of 48V AlGaN/GaN high electron mobility transistor technology on silicon carbide

被引：5

作者：

Brown, J. D. ^{[1
]}

Lee, S. ^{[1
]}

Lieu, D. ^{[1
]}

Martin, J. ^{[1
]}

Vetury, R. ^{[1
]}

Poulton, M. J. ^{[1
]}

Shealy, J. B. ^{[1
]}

机构：

[1] RFMD, Charlotte, NC 28269 USA

来源：

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年

关键词：

gallium compounds; power amplifiers; FETs; semiconductor devices; scattering parameters; microwave amplifier;

D O I：

10.1109/MWSYM.2007.380412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gallium Nitride based HEMTs are a promising technology for high voltage, high power, high frequency applications. In addition to the potential for high operating voltage, this technology may also be suited for applications that utilize modulation of the drain voltage to improve overall amplifier efficiency. RFMD has developed a GaN HEMT technology platform on semi-insulating SiC substrates. This technology includes a 0.5 mu m gate process and advanced field plate designs to maximize device performance. We report on devices from this technology, operated over a range of drain bias conditions. Performance and reliability results illustrate the compatibility of this device technology for high voltage and variable voltage applications.

引用

页码：303 / 306

页数：4

共 7 条

[1]

BROWN JD, 2004, 2004 IEEE MTT S INT

[2]

BROWN JD, 2006, ECS T

[3] A GaNHFET device technology on 3" SiC substrates for wireless infrastructure applications [J].

Green, B. M. ;

Henry, H. ;

Selbee, J. ;

Lawrence, R. ;

Moore, K. ;

Abdou, J. ;

Miller, M. .

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :706-709

[4] Linearity and efficiency performance of GaNHEMTs with digital pre-distortion correction [J].

Poulton, M. J. ;

Leverich, W. K. ;

Shealy, J. B. ;

Vetury, R. ;

Brown, J. D. ;

Green, D. S. ;

Gibb, S. R. .

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :1327-+

[5] Integrated micro-Raman/Infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures [J].

Sarua, Andrei ;

Ji, Hangfeng ;

Kuball, Martin ;

Uren, Michael J. ;

Martin, Trevor ;

Hilton, Keith P. ;

Balmer, Richard S. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (10) :2438-2447

[6] 370-W output power GaN-FET amplifier with low distortion for W-CDMA base stations [J].

Wakejima, Akio ;

Matsunaga, Kohji ;

Okamoto, Yasuhiro ;

Ota, Kazuki ;

Ando, Yuji ;

Nakayama, Tatsuo ;

Miyamoto, Hironobu .

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :1360-+

[7]

WU YF, 2001, 2001 IEEE IEDM, P378

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