Interface modification and trap-type transformation in Al-doped CdO/Si-nanowire arrays/p-type Si devices by nanowire surface passivation

被引：8

作者：

Lin, Yow-Jon ^{[1
]}

Cho, Wei-Min ^{[1
]}

Chang, Hsing-Cheng ^{[2
]}

Chen, Ya-Hui ^{[3
]}

机构：

[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[2] Feng Chia Univ, Dept Automat Control Engn, Taichung 407, Taiwan

[3] Feng Chia Univ, Precis Instrument Support Ctr, Taichung 407, Taiwan

来源：

CURRENT APPLIED PHYSICS | 2015年 / 15卷 / 03期

关键词：

Defects; Semiconductors; Passivation; Electrical properties; Nanostructures; ELECTRICAL-PROPERTIES; SCHOTTKY DIODES; H2O2; TREATMENT; THIN-FILM; SILICON;

D O I：

10.1016/j.cap.2014.12.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present work reports the fabrication and detailed electrical properties of Al-doped CdO/Si-nanowire (SiNW) arrays/p-type Si Schottky diodes with and without SiNWsurface passivation. It is shown that the interfacial trap states influence the electronic conduction through the device. The experimental results demonstrate that the effects of the dangling bonds at the SiNW surface and Si vacancies at the SiOx/SiNW interface which can be changed by the Si-O bonding on the energy barrier lowering and the charge transport property. The induced dominance transformation from electron traps to hole traps in the SiNWs by controlling the passivation treatment time is found in this study. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：213 / 218

页数：6

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