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InGaAs/AlAsSb quantum cascade detectors operating in the near infrared
被引:60
作者:

Giorgetta, F. R.
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Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

Baumann, E.
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机构: Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

Hofstetter, D.
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机构: Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

Manz, C.
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机构: Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

Yang, Q.
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机构: Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

Koehler, K.
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机构: Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

Graf, M.
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机构: Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
机构:
[1] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
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D O I:
10.1063/1.2784289
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The authors report on short-wavelength In0.53Ga0.47As/AlAs0.56Sb0.44 quantum cascade detectors (QCDs). At room temperature, one device detects at 505 meV (2.46 mu m) with a responsivity of 2.57 mA/W, while a second QCD is sensitive at 580 meV (2.14 mu m) with a responsivity of 0.32 mA/W.
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