Low frequency noise in InSb/GaAs and InSb/Si channels

被引：7

作者：

Dobbert, J. ^{[1
]}

Tran, L. ^{[1
]}

Hatami, F. ^{[1
]}

Masselink, W. T. ^{[1
]}

Kunets, Vas. P. ^{[2
]}

Salamo, G. J. ^{[2
]}

机构：

[1] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany

[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 10期

关键词：

BEAM EPITAXIAL-GROWTH; HIGH-MOBILITY INSB; QUANTUM 1/F NOISE; ELECTRONIC-PROPERTIES; GAAS; SI; EPILAYERS; LAYERS; FILMS;

D O I：

10.1063/1.3483233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The low frequency noise features of InSb grown on GaAs and Si substrates using molecular-beam epitaxy are investigated in the temperature range from 80 to 300 K. In all samples the flicker noise dominates the spectra, with Hooge factors as low as 2 X 10(-5) and 9 X 10(-5) for InSb on GaAs and Si, respectively. The temperature dependence of the Hooge factors is investigated. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483233]

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页数：3

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