Electronic structure and thermoelectric power of CeNi4Si

被引:16
作者
Kowalczyk, A.
Falkowski, M.
Tran, V. H.
Pugaczowa-Michalska, M.
机构
[1] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
[2] Polish Acad Sci, W Trzebiatowski Inst Low Temp & Struct Res, PL-50950 Wroclaw, Poland
关键词
electronic structure; transport properties; mixed valence;
D O I
10.1016/j.jallcom.2006.09.008
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The studies of the thermoelectric power and band structure calculations for CeNi4Si are reported. These studied are supported by magnetic susceptibility, electrical resistivity, specific heat and X-ray photoemission spectroscopy measurements. CeNi4Si is paramagnetic down to 2 K and follows the Curie-Weiss law with mu(eff) = 0.52 mu(B)/f.u. and the paramagnetic Curie temperature theta p = -2 K. This effective paramagnetic moment is lower than the free Ce3+ value. The obtained values for the f occupancy nf and for the coupling Delta of the f level with the conduction states are in good agreement with the values found for mixed valence compounds. Below the Fermi energy the total density of states contains mainly the d states of Ni atoms. The narrow peaks of the f states of Cc atoms were found above the Fermi level. CeNi4Si is characterized by gamma = 16 mJ mol(-1) K-2 and theta(D) = 335 K. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:13 / 17
页数:5
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