Effects of nitrogen addition on the properties of a-SiCN:H films using hexamethyldisilazane

被引:0
作者
Limmanee, Amornrat [1 ]
Otsubo, Michio [1 ]
Sugiura, Tsutomu [1 ]
Sato, Takehiko [2 ]
Miyajima, Shinsuke [1 ]
Yamada, Akira [3 ]
Konagai, Makoto [1 ]
机构
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1-S9-9 O Okayama, Tokyo 1528552, Japan
[2] Mitsubishi Electr Corp, Mat & Proc Technol, Sagamihara, Kanagawa 2291195, Japan
[3] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
来源
AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007 | 2007年 / 989卷
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中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We deposited a -SiCN:H films by HWCVD using a gas mixture of hexamethyldisilazane (HMDS), H-2 and N-2, and fabricated cast polycrystalline silicon (poly c-Si) solar cells with the a-SiCN:H passivation and anti-reflection layer. N-2 addition led to the reduction of the refractive index (n) of the a-SiCN:H films due to the increase in nitrogen concentration of the films. This improved performance of the antireflection layer. The advantage of adding N-2 to the process was demonstrated by the improvement in short circuit current (J(SC)) and efficiency (eta) of cast poly c-Si silicon solar cells.
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页码:49 / +
页数:2
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