Effects of nitrogen addition on the properties of a-SiCN:H films using hexamethyldisilazane

被引：0

作者：

Limmanee, Amornrat ^{[1
]}

Otsubo, Michio ^{[1
]}

Sugiura, Tsutomu ^{[1
]}

Sato, Takehiko ^{[2
]}

Miyajima, Shinsuke ^{[1
]}

Yamada, Akira ^{[3
]}

Konagai, Makoto ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1-S9-9 O Okayama, Tokyo 1528552, Japan

[2] Mitsubishi Electr Corp, Mat & Proc Technol, Sagamihara, Kanagawa 2291195, Japan

[3] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007 | 2007年 / 989卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We deposited a -SiCN:H films by HWCVD using a gas mixture of hexamethyldisilazane (HMDS), H-2 and N-2, and fabricated cast polycrystalline silicon (poly c-Si) solar cells with the a-SiCN:H passivation and anti-reflection layer. N-2 addition led to the reduction of the refractive index (n) of the a-SiCN:H films due to the increase in nitrogen concentration of the films. This improved performance of the antireflection layer. The advantage of adding N-2 to the process was demonstrated by the improvement in short circuit current (J(SC)) and efficiency (eta) of cast poly c-Si silicon solar cells.

引用

页码：49 / +

页数：2

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