Effects of nitrogen addition on the properties of a-SiCN:H films using hexamethyldisilazane

被引：0

作者：

Limmanee, Amornrat ^{[1
]}

Otsubo, Michio ^{[1
]}

Sugiura, Tsutomu ^{[1
]}

Sato, Takehiko ^{[2
]}

Miyajima, Shinsuke ^{[1
]}

Yamada, Akira ^{[3
]}

Konagai, Makoto ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1-S9-9 O Okayama, Tokyo 1528552, Japan

[2] Mitsubishi Electr Corp, Mat & Proc Technol, Sagamihara, Kanagawa 2291195, Japan

[3] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007 | 2007年 / 989卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We deposited a -SiCN:H films by HWCVD using a gas mixture of hexamethyldisilazane (HMDS), H-2 and N-2, and fabricated cast polycrystalline silicon (poly c-Si) solar cells with the a-SiCN:H passivation and anti-reflection layer. N-2 addition led to the reduction of the refractive index (n) of the a-SiCN:H films due to the increase in nitrogen concentration of the films. This improved performance of the antireflection layer. The advantage of adding N-2 to the process was demonstrated by the improvement in short circuit current (J(SC)) and efficiency (eta) of cast poly c-Si silicon solar cells.

引用

页码：49 / +

页数：2

共 50 条

[21] Effect of nitrogen addition on the properties and thermal stability of fluorinate amorphous carbon films [J].

Lai, Chia-Han ;

Lai, Wei-Shun ;

Chiue, Hua-Chun ;

Chen, Hung-Jen ;

Chang, Shou-Yi ;

Lin, Su-Jien .

THIN SOLID FILMS, 2006, 510 (1-2) :125-133

[22] Effect of nitrogen addition on the elastic and structural properties of amorphous carbon thin films [J].

Valentini, L ;

Kenny, JM ;

Carlotti, G ;

Guerrieri, M ;

Signorelli, G ;

Lozzi, L ;

Santucci, S .

THIN SOLID FILMS, 2001, 389 (1-2) :315-320

[23] Optical, electrical and structural properties of amorphous SiCN:H films prepared by rf glow-discharge decomposition [J].

Nakaaki, I ;

Saito, N .

APPLIED SURFACE SCIENCE, 2001, 169 :468-471

[24] Nitrogen doping effects on electrical properties of diamond films [J].

Jiang, N ;

Hatta, A ;

Ito, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10A) :L1175-L1177

[25] PECVD nitrogen doped a-SiC:H films: : Properties [J].

Huran, J ;

Hotovy, I ;

Kobzev, AP ;

Balalykin, NI .

ASDAM '02, CONFERENCE PROCEEDINGS, 2002, :67-70

[26] Effects of nitrogen gas addition on superconductivity of tin cluster-assembled films [J].

Kumagai, Kengo ;

Hihara, Takehiko ;

Peng, Dong-Liang ;

Sumiyama, Kenji .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 310 (02) :E144-E146

[27] Effects of nitrogen addition on the structure and field emission properties of amorphous carbon [J].

Chi, EJ ;

Shim, JY ;

Baik, HK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02) :728-730

[28] Physical and barrier properties of plasma-enhanced chemical vapor deposited α-SiCN:H films with different hydrogen contents [J].

Chiang, CC ;

Chen, MC ;

Ko, CC ;

Jang, SM ;

Yu, CH ;

Liang, MS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (08) :5246-5250

[29] Effect of nitrogen addition on the properties of C:F thin films deposited by RF sputtering [J].

Gonon, P .

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2005, 32 (01) :15-21

[30] Coupling effects of methane concentration and nitrogen addition level on morphologies and properties of MPCVD diamond films on WC-Co substrates [J].

Song, Xin ;

Wang, Hua ;

Wang, Xinchang ;

Sun, Fanghong .

← 1 2 3 4 5 →