Time-resolved interband transitions in periodic multilayer δ-doped systems

被引：4
作者：
Bell, MJV
de Sousa, DF
Anjos, V
Nunes, LAO
机构：
[1] Univ Estadual Campinas, BR-1386097 Campinas, SP, Brazil
[2] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
来源：
PHYSICAL REVIEW B | 1998年 / 58卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.58.7205
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work we report a study of radiative interband recombinations in Si periodic multilayer GaAs systems. Photoluminescence and time-resolved photoluminescence measurements were performed, in order to discriminate band-to-band transitions, recombination of quantum confined electrons and photogenerated holes, as well as impurity assisted transitions. Results have been compared with self-consistent calculations, considering radiative recombination with heavy holes.
引用
收藏
页码：7205 / 7209
页数：5
相关论文
共 16 条
[1]   RESONANT RAMAN-SPECTRA OF SPIN-DENSITY TRANSITIONS IN PERIODICALLY DELTA-DOPED GAAS [J].
ANJOS, V ;
IORIATTI, L ;
NUNES, LAO .
PHYSICAL REVIEW B, 1994, 49 (11) :7805-7808
[2]   ELECTRONIC-STRUCTURE OF PERIODICALLY DELTA-DOPED GAAS-SI [J].
CHICO, L ;
GARCIAMOLINER, F ;
VELASCO, VR .
PHYSICAL REVIEW B, 1993, 48 (15) :11427-11430
[3]   A SYSTEM FOR TIME-RESOLVED LASER FLUORESCENCE SPECTROSCOPY WITH MULTIPLE PICOSECOND GATING [J].
CUBEDDU, R ;
DOCCHIO, F ;
LIU, WQ ;
RAMPONI, R ;
TARONI, P .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1988, 59 (10) :2254-2259
[4]   SUBBAND STRUCTURE OF MULTIPLE SI DELTA-DOPED PLANES IN GAAS [J].
DEWDNEY, AJ ;
HOLMES, S ;
YU, H ;
FAHY, M ;
MURRAY, R .
SUPERLATTICES AND MICROSTRUCTURES, 1993, 14 (2-3) :205-210
[5]  
Henriques A. B., 1996, Brazilian Journal of Physics, V26, P225
[6]  
*INSPEC, 1986, PROP GALL ARS
[7]   RADIATIVE TRANSITIONS ASSOCIATED WITH HOLE CONFINEMENT AT SI DELTA-DOPED PLANES IN GAAS [J].
KE, ML ;
RIMMER, JS ;
HAMILTON, B ;
EVANS, JH ;
MISSOUS, M ;
SINGER, KE ;
ZALM, P .
PHYSICAL REVIEW B, 1992, 45 (24) :14114-14121
[8]   PHOTOCURRENT AND PHOTOLUMINESCENCE FROM QUANTUM-CONFINED ELECTRONS IN PERIODICALLY DELTA-DOPED SI-GAAS [J].
MAAREF, H ;
MEJRI, H ;
PRIESTER, C ;
BARRAU, J ;
BACQUET, G ;
BOURGOIN, JC .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1987-1991
[9]   RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS [J].
MACIEL, AC ;
TATHAM, M ;
RYAN, JF ;
WORLOCK, JM ;
NAHORY, RE ;
HARBISON, JP ;
FLOREZ, LT .
SURFACE SCIENCE, 1990, 228 (1-3) :251-254
[10]  
MULLER F, 1990, SEMICOND SCI TECH, V6, pC133
12