Recent developments in the MOCVD and ALD of rare earth oxides and silicates

被引：52
作者：
Jones, AC
Aspinall, HC
Chalker, PR
Potter, RJ
Kukli, K
Rahtu, A
Ritala, M
Leskelä, M
机构：
[1] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England
[2] Univ Liverpool, Dept Mat Sci & Engn, Liverpool L69 3BX, Merseyside, England
[3] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 118卷 / 1-3期
关键词：
lanthanide oxides; metalorganic chemical vapour deposition; atomic layer deposition;
D O I：
10.1016/j.mseb.2004.12.081
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Lanthanide, or rare-earth oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub-0.1 mu m CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of these high-K dielectric oxides and in this paper some of our recent research into the MOCVD and ALD of PrOx, La2O3, Gd2O3, Nd2O3 and their related silicates are reviewed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：97 / 104
页数：8
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