Study on the intermixing of GaAs/AlGaAs asymmetrical coupling double quantum well with photoluminescence spectra

被引：0
作者：
Miao, ZL [1 ]
Lu, W
Chen, PP
Li, ZF
Liu, P
Yuan, XZ
Cai, WY
Xu, WL
Shen, XC
Chen, CM
Zhu, DZ
Hu, J
Li, MQ
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Lab Nucl Anal Tech, Shanghai 200083, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2001年 / 20卷 / 01期
关键词：
asymmetrical coupling double quantum well (ACDQW); combinative implantation; intermixing; photoluminescence; (PL) spectrum;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
GaAs/AlGaAs asymmetrical coupling double quantum wells (ACDQW) were grown with MBE with the combinative implantation method , and several areas of coupling quantum well with different implantation ion of As+ and H+ and different ion doses in single wafer were obtained. Without rapid thermal annealing procedure, maximum difference of transition energy of intersubbands of 100meV was found from the photoluminescence spectra measured at room temperature. During the implantation process, the energy shift caused by combinative implanation was found to be larger than that caused by ion implantation individually.
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页码：15 / 19
页数：5
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