Circuit Modeling of Cu/CNT Composite Through-Silicon Vias (TSV)

被引：0
|
作者：
Zheng, Jie [1 ]
Su, Zhi-Qiang [1 ]
Wang, Guan-Yi [1 ]
Li, Meng [1 ]
Zhao, Wen-Sheng [1 ]
Wang, Gaofeng [1 ]
机构：
[1] Hangzhou Dianzi Univ, Microelect CAD Ctr, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou, Zhejiang, Peoples R China
来源：
2015 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2015年
关键词：
Through-silicon via (TSV); carbon nanotube (CNT); Cu/CNT composite TSV; equivalent impedance model; current density distribution; reliability; ICS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the CNT TSVs, as well as Cu/CNT composite TSVs, are investigated based on the equivalent circuit model. The effective complex conductivity, which incorporates the kinetic inductive effect of CNTs, has been employed for high-frequency characterization. The performance comparison between Cu, CNT, and Cu/CNT composite TSVs are carried out. It is found that Cu/CNT composite TSVs can be utilized to improve the system reliability without losing much performance.
引用
收藏
页码：422 / 424
页数：3
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