Investigation of Schottky barrier height using area as parameter: Effect of hydrogen peroxide treatment on electrical optical properties of Schottky diode

被引:6
作者
Yadav, Aniruddh Bahadur [1 ]
Sannakashappanavar, Basavaraj S. [2 ]
机构
[1] Velagapudi Ramakrishna Siddhartha Engn Coll, Dept Elect & Commun Engn, Kanuru, Andhra Pradesh, India
[2] Annasaheb Dange Coll Engn & Technol, Dept Elect & Telecommun Engn, Ashta, India
关键词
ZnO thin film; Schottky contact; Hydrogen peroxide treatment; Barrier Hieght considering area as parameter; UV Detection; ZNO THIN-FILMS; ZINC-OXIDE; CONTACTS; DEPOSITION; JUNCTION; SENSORS; SI;
D O I
10.1016/j.optmat.2021.111341
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
RF sputtered 25 nm ZnO thin film surface treated with H2O2 has produced the Schottky diodes of improved electrical and optical properties. The enhancement is associated with adsorbed and introduced oxygen at the film's surface and in bulk while H2O2 treatment as revealed by the XPS analysis. Further, H2O2 treatment also has improved the ZnO thin film's surface morphology, crystal structure, and optical properties studied by XRD, SEM, and PL measurement. The experimentally measured energy band gap is compared with density functional theory computation-based result to find the possible cause behind the change in edge excitation energy band after treatment. Besides, an alternative method by considering the Schottky diode area as a parameter is introduced to calculate barrier height. The five diodes average barrier height, calculated by the conventional Schottky model, was lower than the barrier height obtained by this proposed method. This result is obtained for the diodes fabricated on the nontreated and treated sample. The conventional and proposed methods showed Schottky diodes potential barrier lowering under UV illumination, and it was associated with the change in carrier density and desorption of adsorbed oxygen on the ZnO surface. The treated surface's low conductivity and high oxygen concentration governed the superior UV detection capability of Schottky diodes fabricated on it. The literature demonstrates many similar studies for large thicknesses of ZnO 150-1000 nm but not on ultra-thin (25 nm) ZnO film, even though the UV light can penetrate ZnO approximately to this depth.
引用
收藏
页数:9
相关论文
共 38 条
[1]   Oxygen plasma treated epitaxial ZnO thin films for Schottky ultraviolet detection [J].
Angadi, Basavaraj ;
Park, H. C. ;
Choi, H. W. ;
Choi, J. W. ;
Choi, W. K. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (05) :1422-1425
[2]   Post-deposition treatment behaviour of zinc oxide thin films in hydrogen peroxide solution [J].
Arora, A. ;
George, P. J. ;
Dwivedi, V. K. ;
Gupta, V. .
MATERIALS SCIENCE AND TECHNOLOGY, 2009, 25 (05) :591-594
[3]   Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip [J].
Atabaki, Amir H. ;
Moazeni, Sajjad ;
Pavanello, Fabio ;
Gevorgyan, Hayk ;
Notaros, Jelena ;
Alloatti, Luca ;
Wade, Mark T. ;
Sun, Chen ;
Kruger, Seth A. ;
Meng, Huaiyu ;
Al Qubaisi, Kenaish ;
Wang, Imbert ;
Zhang, Bohan ;
Khilo, Anatol ;
Baiocco, Christopher V. ;
Popovic, Milos A. ;
Stojanovic, Vladimir M. ;
Ram, Rajeev J. .
NATURE, 2018, 556 (7701) :349-+
[4]   Vacancy clustering and acceptor activation in nitrogen-implanted ZnO [J].
Borseth, Thomas Moe ;
Tuomisto, Filip ;
Christensen, Jens S. ;
Monakhov, Edouard V. ;
Svensson, Bengt G. ;
Kuznetsov, Andrej Yu. .
PHYSICAL REVIEW B, 2008, 77 (04)
[5]   ZnO Schottky barriers and Ohmic contacts [J].
Brillson, Leonard J. ;
Lu, Yicheng .
JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
[6]   Strong correlation between optical properties and mechanism in deficiency of normalized self-assembly ZnO nanorods [J].
Chang, Feng-Ming ;
Brahma, Sanjaya ;
Huang, Jing-Heng ;
Wu, Zong-Zhe ;
Lo, Kuang-Yao .
SCIENTIFIC REPORTS, 2019, 9 (1)
[7]   ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition [J].
Chen, Miin-Jang ;
Yang, Jer-Ren ;
Shiojiri, Makoto .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (07)
[8]   Lithium doped zinc oxide based flexible piezoelectric-triboelectric hybrid nanogenerator [J].
Chowdhury, Aminur Rashid ;
Abdullah, Abu Musa ;
Hussain, Istiak ;
Lopez, Jasmin ;
Cantu, Denae ;
Gupta, Santosh K. ;
Mao, Yuanbing ;
Danti, Serena ;
Uddin, M. Jasim .
NANO ENERGY, 2019, 61 :327-336
[9]   QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials [J].
Giannozzi, Paolo ;
Baroni, Stefano ;
Bonini, Nicola ;
Calandra, Matteo ;
Car, Roberto ;
Cavazzoni, Carlo ;
Ceresoli, Davide ;
Chiarotti, Guido L. ;
Cococcioni, Matteo ;
Dabo, Ismaila ;
Dal Corso, Andrea ;
de Gironcoli, Stefano ;
Fabris, Stefano ;
Fratesi, Guido ;
Gebauer, Ralph ;
Gerstmann, Uwe ;
Gougoussis, Christos ;
Kokalj, Anton ;
Lazzeri, Michele ;
Martin-Samos, Layla ;
Marzari, Nicola ;
Mauri, Francesco ;
Mazzarello, Riccardo ;
Paolini, Stefano ;
Pasquarello, Alfredo ;
Paulatto, Lorenzo ;
Sbraccia, Carlo ;
Scandolo, Sandro ;
Sclauzero, Gabriele ;
Seitsonen, Ari P. ;
Smogunov, Alexander ;
Umari, Paolo ;
Wentzcovitch, Renata M. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (39)
[10]   Structural and optical properties of ZnO thin films prepared by RF sputtering at different thicknesses [J].
Hammad, Ahmed H. ;
Abdel-wahab, M. Sh ;
Vattamkandathil, Sajith ;
Ansari, Akhalakur Rahman .
PHYSICA B-CONDENSED MATTER, 2018, 540 :1-8