1.55 μm VCSELs with InP/air-gap distributed bragg reflectors

被引：0

作者：

Strassner, M ^{[1
]}

Regreny, P ^{[1
]}

Bouchoule, S ^{[1
]}

Chitica, N ^{[1
]}

Saint-Girons, G ^{[1
]}

Sagnes, I ^{[1
]}

Jacquet, J ^{[1
]}

Leclercq, JL ^{[1
]}

机构：

[1] Royal Inst Technol, Inst Microelect & Informat Technol, S-16440 Kista, Sweden

来源：

2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The presented VCSELs demonstrate the possibility of fabricating cavities with extremely large Q-factors by using InP/air-gap DBRs. At the same time, the deployed technologies permits to fabricate potentially tunable VCSELs. Photo-pumped and electrically pumped VCSELs and their tunability when working as resonant cavity light emitting diodes are presented. Output powers of up to I 10 mu W at room temperature and a maximum wavelength tuning of 22 nm have been achieved.

引用

页码：700 / 703

页数：4

共 50 条

[1] High reflectivity distributed Bragg reflectors for 1.55 μm VCSELs using InP/airgap
Tsai, JY
Lu, TC
Wang, SC
SOLID-STATE ELECTRONICS, 2003, 47 (10) : 1825 - 1828
[2] Fabrication of InP/air-gap distributed Bragg reflectors and micro-cavities
Streubel, K
Rapp, S
Andre, J
Chitica, N
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 364 - 367
[3] Micromachined tunable filter based on InP/air-gap distributed Bragg reflectors
Hou, Shi-Hua
Sun, Jie
Mao, Rong-Wei
Wu, Xu-Ming
Ma, Xiao-Yu
Tan, Man-Qing
Chen, Liang-Hui
Bandaoti Guangdian/Semiconductor Optoelectronics, 2006, 27 (05): : 543 - 546
[4] Fabrication of InP/air-gap distributed Bragg reflectors and micro-cavities
Streubel, K.
Rapp, S.
Andre, J.
Chitica, N.
Materials science & engineering. B, Solid-state materials for advanced technology, 1997, B44 (1-3): : 364 - 367
[5] Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs
Reddy, MHM
Asano, T
Koda, R
Buell, DA
Coldren, LA
ELECTRONICS LETTERS, 2002, 38 (20) : 1181 - 1182
[6] MOCVD InP/AlGalnAs distributed Bragg reflector for 1.55μm VCSELs
Sagnes, I
Le Roux, G
Mériadec, C
Mereuta, A
Saint-Girons, G
Bensoussan, M
ELECTRONICS LETTERS, 2001, 37 (08) : 500 - 501
[7] Novel 1.55 μm VCSELs with top metamorphic GaAs/GaAlAs and bottom InP/InGaAsP Bragg reflectors
Starck, C.
Boucart, J.
Plais, A.
Bouche, N.
Derouin, E.
Pinquier, A.
Gaborit, F.
Bonnet-Gamard, J.
Fortin, C.
Goldstein, L.
Brillouet, F.
Salet, P.
Carpentier, D.
Jacquet, J.
Conference on Optical Fiber Communication, Technical Digest Series, 1999,
[8] 1.57-μm InP-based resonant-cavity-enhanced photodetector with InP/air-gap Bragg reflectors
Ren, XM
Huang, H
Chong, YZ
Huang, YQ
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2004, 42 (02) : 133 - 135
[9] Long wavelength VCSELs with InP/air-gap DBRs
Lin, CK
Bour, DP
Zhu, JT
Perez, WH
Leary, MH
Tandon, A
Corzine, SW
Tan, MRT
VERTICAL-CAVITY SURFACE-EMITTING LASERS VIII, 2004, 5364 : 16 - 24
[10] High temperature, continuous-wave operation of 1.3- and 1.55-/μm VCSELs with InP/air-gap DBRs
Lin, CK
Bour, DP
Zhu, JT
Perez, WH
Leary, MH
Tandon, A
Corzine, SW
Tan, MRT
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) : 1415 - 1421

← 1 2 3 4 5 →