Resonant tunneling in disordered materials such as SiO2/Si/SiO2

被引：1

作者：

Lake, R

Brar, B

Wilk, GD

Seabaugh, A

Klimeck, G

机构：

[1] Raytheon TI Syst, Dallas, TX 75265 USA

[2] Texas Instruments Inc, Dallas, TX 75265 USA

来源：

COMPOUND SEMICONDUCTORS 1997 | 1998年 / 156卷

关键词：

D O I：

10.1109/ISCS.1998.711753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have analyzed the effect of disorder in both the well and barriers of a resonant tunneling diode (RTD). If the disorder is limited solely to the barriers, a good peak-to-valley ratio (PVR) is expected. We describe a general guideline relating the PVR to the bulk mobility and effective mass of the well material of an RTD. We compare the effects of correlated versus uncorrelated disorder on the valley current. We discuss why interband tunnel devices such as the Esaki diode are more robust than RTDs in the presence of disorder.

引用

收藏

页码：617 / 620

页数：4

相关论文

共 10 条

[1] Direct extraction of the electron tunneling effective mass in ultrathin SiO2 [J].

Brar, B ;

Wilk, GD ;

Seabaugh, AC .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2728-2730

[2] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].

ESAKI, L .

PHYSICAL REVIEW, 1958, 109 (02) :603-604

[3] RESONANT TUNNELING THROUGH SI-SIO2 DOUBLE BARRIERS [J].

HIROSE, M ;

MORITA, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :561-564

[4] Single and multiband modeling of quantum electron transport through layered semiconductor devices [J].

Lake, R ;

Klimeck, G ;

Bowen, RC ;

Jovanovic, D .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :7845-7869

[5] Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode [J].

Lake, R ;

Klimeck, G ;

Bowen, RC ;

Fernando, C ;

Moise, T ;

Kao, YC .

SUPERLATTICES AND MICROSTRUCTURES, 1996, 20 (03) :279-285

[6] RATE-EQUATIONS FOR THE PHONON PEAK IN RESONANT-TUNNELING STRUCTURES [J].

LAKE, R ;

KLIMECK, G ;

ANANTRAM, MP ;

DATTA, S .

PHYSICAL REVIEW B, 1993, 48 (20) :15132-15137

[7] QUANTUM CONFINEMENT AND LIGHT-EMISSION IN SIO2/SI SUPERLATTICES [J].

LU, ZH ;

LOCKWOOD, DJ ;

BARIBEAU, JM .

NATURE, 1995, 378 (6554) :258-260

[8]

SEABAUGH A, 1997, ENCY APPL PHYSICS, V22, P1

[9] NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE BASED ON RESONANT INTERBAND TUNNELING [J].

SODERSTROM, JR ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1989, 55 (11) :1094-1096

[10] P-N DOUBLE-QUANTUM-WELL RESONANT INTERBAND TUNNELING DIODE WITH PEAK-TO-VALLEY CURRENT RATIO OF 144 AT ROOM-TEMPERATURE [J].

TSAI, HH ;

SU, YK ;

LIN, HH ;

WANG, RL ;

LEE, TL .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (09) :357-359