Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric

被引：11

作者：

Zhang, S. ^{[1
]}

Wei, K. ^{[1
]}

Zhang, Y. C. ^{[1
]}

Chen, X. J. ^{[1
]}

Huang, S. ^{[1
]}

Yin, H. B. ^{[1
]}

Liu, G. G. ^{[1
]}

Yuan, T. T. ^{[1
]}

Zheng, Y. K. ^{[1
]}

Wang, X. H. ^{[1
]}

Liu, X. Y. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, High Frequency High Voltage Device & Integrated C, Beijing 100029, Peoples R China

来源：

VACUUM | 2021年 / 191卷

关键词：

GaN MIS-HEMT; Gate insulator; Leakage current; Interface states; Transport property; RAY PHOTOELECTRON-SPECTROSCOPY; V-TH INSTABILITY; LEAKAGE-CURRENT; VOLTAGE;

D O I：

10.1016/j.vacuum.2021.110359

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiN deposited by plasma-enhanced atomic layer deposition (PEALD) is investigated as gate dielectric layer for GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The X-ray photoelectron spectroscopy (XPS) confirms low oxygen content in SiN-layer and the interface of SiN/(Al)GaN. The fabricated MIS-HEMTs exhibit significant reduction in gate leakage current (two or three orders of magnitude) and improvement in drain current (ID) characteristics, compared with the controlled HEMTs. A remarkable small threshold voltage (VTH) hysteresis (0.12 +/- 0.05 V) and an enhanced 2DEG channel mobility are also achieved for PEALD SiN/(Al)GaN MIS-HEMTs. Simultaneously, a distribution of the interface states is quantitatively described by constant-capacitance deep-level transient spectroscopy (CC-DLTS), displaying a low density of 1.6 x 1013 cm-2 eV-1 at level depth of 0.03 eV and below 2.1 x 1012 cm-2 eV-1 at deep level depth of EC - ET > 0.4 eV. The suppressed interface traps density results in an improved performance for MIS-HEMTs. The dependence of the characteristics of MIS-HEMTs on SiN thickness (tSiN) was also studied in detail.

引用

页数：6

共 47 条

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