Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices

被引:34
作者
Guo, Pengfei [1 ]
Burrow, Joshua A. [1 ]
Sevison, Gary A. [1 ,2 ]
Sood, Aditya [3 ,4 ]
Asheghi, Mehdi [4 ]
Hendrickson, Joshua R. [2 ]
Goodson, Kenneth E. [4 ]
Agha, Imad [1 ,5 ]
Sarangan, Andrew [1 ]
机构
[1] Univ Dayton, Dept Electroopt & Photon, Dayton, OH 45469 USA
[2] US Air Force, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA
[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[4] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[5] Univ Dayton, Dept Phys, Dayton, OH 45469 USA
基金
美国国家科学基金会;
关键词
DOPED GE2SB2TE5; CHANGE MEMORY; CRYSTALLIZATION BEHAVIOR; FILMS;
D O I
10.1063/1.5053713
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most importantly, our results show that doping produces the desired electrical performance without adversely affecting the film's optical properties. The nickel doping level is approximately 2% and the lattice structure remains nearly unchanged when compared with undoped-GST. The refractive indices in amorphous and crystalline states were obtained using ellipsometry which echoes the results of X-ray diffraction. The material's thermal transport properties are measured using time-domain thermoreflectance, showing no change upon doping. The advantages of this doping system will open up opportunities for designing electrically reconfigurable high speed optical elements in the near-infrared spectrum.
引用
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页数:5
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