Mott and Efros-Shklovskii Variable Range Hopping in CdSe Quantum Dots Films

被引:127
作者
Liu, Heng [1 ]
Pourret, Alexandre [1 ]
Guyot-Sionnest, Philippe [1 ]
机构
[1] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA
关键词
CdSe quantum dots film; ES-Mott variable range hopping crossover; low temperature; electrochemistry; COULOMB GAP; NANOCRYSTAL SOLIDS; CONDUCTIVITY; ASSEMBLIES; CROSSOVER;
D O I
10.1021/nn101376u
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The model of variable range hopping conductivity predicts a crossover between Mott and Efros-Shklovskii as a function of temperature and density of states. This is observed using monodispersed CdSe colloidal quantum dot 3D solids where the density of states at the Fermi level is varied by electrochemistry. At low density of states, both below the lowest state (<0.4e(-)/dot) and in the conductivity gap between the first and second state (2e(-)/dot), the temperature dependence of the conductivity shows the 1/4 exponent of Mott hopping. At other fillings up to 6e(-)/dot, the conductivity shows the 1/2 exponent of Efros-Shklovskii hopping. The non-Ohmic conductivity is also found to be explained quantitatively by the variable range hopping model.
引用
收藏
页码:5211 / 5216
页数:6
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