Optical phonons assisted infrared absorption in VO2 based bolometer

被引：35
作者：
Chen, Changhong [1 ]
Zhou, Zhiping
机构：
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
[2] Georgia Inst Technol, Sch ECE, Atlanta, GA 30332 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 01期
关键词：
D O I：
10.1063/1.2753746
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical phonons assisted infrared absorption in VO2 based bolometer is demonstrated to be free, low, or over damping oscillation over different spectral ranges depending on the passivation thickness. In particular, it will become saturated due to the over damping oscillation in the spectral range corresponding to the absorption bands from strong phonon vibrations. The device reaches a peak absorbance of 99.9% at wavelength of 9.1 mu m and shows a broadband absorption, independent of metal-insulator transition and radiation incident angle up to 30 degrees in the long wavelength (8-14 mu m) infrared region. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 28 条
  • [1] AN INFRARED DIELECTRIC FUNCTION MODEL FOR AMORPHOUS SOLIDS
    BRENDEL, R
    BORMANN, D
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 1 - 6
  • [2] Femtosecond holographic interferometry for studies of semiconductor ablation using vanadium dioxide film
    Bugayev, AA
    Gupta, MC
    [J]. OPTICS LETTERS, 2003, 28 (16) : 1463 - 1465
  • [3] CONFIGURATIONAL STATISTICS IN A-SIXNYHZ ALLOYS - A QUANTITATIVE BONDING ANALYSIS
    BUSTARRET, E
    BENSOUDA, M
    HABRARD, MC
    BRUYERE, JC
    POULIN, S
    GUJRATHI, SC
    [J]. PHYSICAL REVIEW B, 1988, 38 (12): : 8171 - 8184
  • [4] Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition -: art. no. 237401
    Cavalleri, A
    Tóth, C
    Siders, CW
    Squier, JA
    Ráksi, F
    Forget, P
    Kieffer, JC
    [J]. PHYSICAL REVIEW LETTERS, 2001, 87 (23) : 237401 - 1
  • [5] CHIVIAN JS, 1979, IEEE J QUANTUM ELECT, V15, P1326, DOI 10.1109/JQE.1979.1069946
  • [6] Modeling and performance of vanadium-oxide transition edge microbolometers
    de Almeida, LAL
    Deep, GS
    Lima, AMN
    Khrebtov, IA
    Malyarov, VG
    Neff, H
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (16) : 3605 - 3607
  • [7] Structural properties of N-rich a-Si-N:H films with a low electron-trapping rate
    Dupont, G
    Caquineau, H
    Despax, B
    Berjoan, R
    Dollet, A
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1997, 30 (07) : 1064 - 1076
  • [8] LATTICE-DYNAMICS OF OXIDES WITH RUTILE STRUCTURE AND INSTABILITIES AT THE METAL-SEMICONDUCTOR PHASE-TRANSITIONS OF NBO2 AND VO2
    GERVAIS, F
    KRESS, W
    [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 4809 - 4814
  • [9] Phase transition-governed opal-VO2 photonic crystal
    Golubev, VG
    Davydov, VY
    Kartenko, NF
    Kurdyukov, DA
    Medvedev, AV
    Pevtsov, AB
    Scherbakov, AV
    Shadrin, EB
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2127 - 2129
  • [10] 2 COMPONENTS OF CRYSTALLOGRAPHIC TRANSITION IN VO2
    GOODENOUGH, JB
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1971, 3 (04) : 490 - +
123