Multi-wavelength Nd:GAGG picosecond laser

被引：26
作者：
Agnesi, Antonio [1 ,2 ]
Pirzio, Federico [1 ,2 ]
Reali, Giancarlo [1 ,2 ]
Arcangeli, Andrea [3 ,4 ]
Tonelli, Mauro [3 ,4 ]
Jia, Zhitai [5 ]
Tao, Xutang [5 ]
机构：
[1] Univ Pavia, Ist Nazl Fis Nucl, Sez Pavia, I-27100 Pavia, Italy
[2] Univ Pavia, Dipartimento Elettron, I-27100 Pavia, Italy
[3] Univ Pisa, Dipartimento Fis, I-56127 Pisa, Italy
[4] Univ Pisa, CNR NEST, I-56127 Pisa, Italy
[5] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
OPTICAL MATERIALS | 2010年 / 32卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Laser materials; Diode-pumped lasers; Optical pulse generation; MODE; GROWTH; POWER;
D O I：
10.1016/j.optmat.2010.03.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Laser operation near 1.06 μm by a diode-pumped Nd:Gd3Al x Ga(5-x) O12 (x = 0.94) (Nd:GAGG) disordered crystal has been investigated. Free-running oscillation, with a slope efficiency as high as 55% and 256 mW output power, was achieved with 500 mW absorbed power using a 1-W laser diode for pumping. Stable passive mode-locking with dual-wavelength operation was obtained with a semiconductor saturable absorber mirror (SAM) and a single-prism, dispersion-compensated cavity. The two-color mode-locking regime is well described by Fourier-limited synchronized pulses with duration ≈3.7 and 5.9 ps and output power ≈65 mW, with wavelength separation of 1.3 nm around 1062 nm. © 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1130 / 1133
页数：4
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