Comparative study of optical and scintillation properties of Ce:YAGG, Ce:GAGG and Ce:LuAGG transparent ceramics

被引:33
作者
Mori, Masaki [1 ]
Xu, Jian [2 ]
Okada, Go [1 ]
Yanagida, Takayuki [1 ]
Ueda, Jumpei [2 ]
Tanabe, Setsuhisa [2 ]
机构
[1] Nara Inst Sci & Technol NAIST, Grad Sch Mat Sci, 8916-5 Takayama Cho, Nara 6300192, Japan
[2] Kyoto Univ, Grad Sch Human & Environm Studies, Sakyo Ku, Yoshida Nihonmatsu Cho, Kyoto 6068501, Japan
关键词
Scintillator; Ce; YAGG; GAGG; LuAGG; SINGLE-CRYSTAL; ELECTRON-TRANSFER; LUMINESCENCE; GROWTH; EMISSION; CE3+;
D O I
10.2109/jcersj2.15239
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigated photoluminescence (PL) and scintillation properties of 0.8 mol% Ce-doped (Y, Gd, Lu)(3)Al2Ga3O12 (Ce:YAGG, Ce:GAGG and Ce:LuAGG) transparent ceramics, which were fabricated by the vacuum sintering method. The obtained samples showed a strong and broad PL emission in the wavelength range from 470 to 600 nm owing to 5d-4f transitions of Ce3+. The PL and scintillation decay curves consisted of two or three exponential components, and the primary components ranged around 35-43 ns. Besides, the scintillation spectra excited by X-rays showed similar features with those in PL. In the X-ray induced afterglow measurements, the Ce: LuAGG sample exhibited the weakest afterglow intensity. The pulse height spectra of these samples showed clear photoabsorption peaks. Among those samples, Ce: LuAGG sample showed the highest scintillation light yield of 18,700 ph/MeV. (C) 2016 The Ceramic Society of Japan. All rights reserved.
引用
收藏
页码:569 / 573
页数:5
相关论文
共 28 条
[1]   Development of Transparent Ceramic Ce-Doped Gadolinium Garnet Gamma Spectrometers [J].
Cherepy, N. J. ;
Seeley, Z. M. ;
Payne, S. A. ;
Beck, P. R. ;
Drury, O. B. ;
O'Neal, S. P. ;
Figueroa, K. Morales ;
Hunter, S. ;
Ahle, L. ;
Thelin, P. A. ;
Stefanik, T. ;
Kindem, J. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (03) :2330-2335
[2]  
Cherepy NJ, 2010, IEEE NUCL SCI CONF R, P1288, DOI 10.1109/NSSMIC.2010.5873975
[3]   Electronic structure and optical properties of the lanthanide activated RE3(Al1-xGax)5O12 (RE=Gd, Y, Lu) garnet compounds [J].
Dorenbos, Pieter .
JOURNAL OF LUMINESCENCE, 2013, 134 :310-318
[4]   INFLUENCE OF ENERGY TRANSFER BY EXCHANGE MECHANISM ON DONOR LUMINESCENCE [J].
INOKUTI, M ;
HIRAYAMA, F .
JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (06) :1978-&
[5]   Crystal Growth and Scintillation Properties of Ce Doped Gd3(Ga,Al)5O12 Single Crystals [J].
Kamada, Kei ;
Yanagida, Takayuki ;
Pejchal, Jan ;
Nikl, Martin ;
Endo, Takanori ;
Tsutsumi, Kousuke ;
Fujimoto, Yutaka ;
Fukabori, Akihiro ;
Yoshikawa, Akira .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (05) :2112-2115
[6]   2 inch diameter single crystal growth and scintillation properties of Ce:Gd3Al2Ga3O12 [J].
Kamada, Kei ;
Yanagida, Takayuki ;
Endo, Takanori ;
Tsutumi, Kousuke ;
Usuki, Yoshiyuki ;
Nikl, Martin ;
Fujimoto, Yutaka ;
Fukabori, Akihiro ;
Yoshikawa, Akira .
JOURNAL OF CRYSTAL GROWTH, 2012, 352 (01) :88-90
[7]   Composition Engineering in Cerium-Doped (Lu,Gd)3(Ga,Al)5O12 Single-Crystal Scintillators [J].
Kamada, Kei ;
Endo, Takanori ;
Tsutumi, Kousuke ;
Yanagida, Takayuki ;
Fujimoto, Yutaka ;
Fukabori, Akihiro ;
Yoshikawa, Akira ;
Pejchal, Jan ;
Nikl, Martin .
CRYSTAL GROWTH & DESIGN, 2011, 11 (10) :4484-4490
[8]   Optical properties and highly efficient laser oscillation of Nd:YAG ceramics [J].
Lu, J ;
Prabhu, M ;
Song, J ;
Li, C ;
Xu, J ;
Ueda, K ;
Kaminskii, AA ;
Yagi, H ;
Yanagitani, T .
APPLIED PHYSICS B-LASERS AND OPTICS, 2000, 71 (04) :469-473
[9]   Luminescence and Luminescence Quenching in Gd3(Ga,Al)5O12 Scintillators Doped with Ce3+ [J].
Ogieglo, Joanna M. ;
Katelnikovas, Arturas ;
Zych, Aleksander ;
Juestel, Thomas ;
Meijerink, Andries ;
Ronda, Cees R. .
JOURNAL OF PHYSICAL CHEMISTRY A, 2013, 117 (12) :2479-2484
[10]   Growth and optical properties of Lu3(Ga,Al)5O12 single crystals for scintillator application [J].
Ogino, Hiraku ;
Yoshikawa, Akira ;
Nikl, Martin ;
Mares, Jiri A. ;
Shimoyama, Jun-ichi ;
Kishio, Kohji .
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (03) :908-911