NbN Josephson Junctions for Single-Flux-Quantum Circuits

被引：0

作者：

Akaike, Hiroyuki ^{[1
]}

Naito, Naoto ^{[1
]}

Nagai, Yuki ^{[1
]}

Fujimaki, Akira ^{[1
]}

机构：

[1] Nagoya Univ, Nagoya, Aichi 4648603, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2011年 / E94C卷 / 03期

关键词：

NbN; Josephson junctions; self-shunted; AlNx; radical-nitridation; NBN/ALN/NBN TUNNEL-JUNCTIONS;

D O I：

10.1587/transele.E94.C.301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the fabrication processes and electrical characteristics of two types of NbN junctions. One is a self-shunted NbN/NbNx/AlN/NbN Josephson junction, which is expected to improve the density of integrated circuits; the other is an underdamped NbN/AlNx/NbN tunnel junction with radical-nitride AlNx barriers, which has highly controllable junction characteristics. In the former, the junction characteristics were changed from underdamped to overdamped by varying the thickness of the NbNx layer. Overdamped junctions with a 6-nm-thick NbNx film exhibited a characteristic voltage of V-c = 0.8 mV and a critical current density of J(c) = 22 A/cm(2) at 4.2 K. In the junctions with radical-nitride AlNx barriers, J(c) could be controlled in the range 0.01-3 kA/cm(2) by varying the process conditions, and good uniformity of the junction characteristics was obtained.

引用

页码：301 / 306

页数：6

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