Advances in Spintronics Devices for Microelectronics - From Spin-transfer Torque to Spin- orbit Torque

被引：0

作者：

Fukami, S. ^{[1
]}

Sato, H. ^{[1
]}

Yamanouchi, M. ^{[1
,2
]}

Ikeda, S. ^{[1
,2
,3
]}

Matsukura, F. ^{[1
,2
,4
]}

Ohno, H. ^{[1
,2
,3
,4
]}

机构：

[1] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, RIEC, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 9800845, Japan

[4] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

2014 19TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC) | 2014年

关键词：

MAGNETIC DOMAIN-WALL; ROOM-TEMPERATURE; LEAKAGE CURRENT; MULTILAYER; MAGNETORESISTANCE; EXCITATION; ANISOTROPY; NANOWIRES; REVERSAL; MOTION;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Recent advances in spintronics devices make it possible to open a new era of microelectronics. In this paper, we review the spintronics devices utilizing spin-transfer torques (STTs) and spin-orbit torques (SOTs) developed in recent years. The progresses of two-terminal STT device with CoFeB-MgO based magnetic tunnel junction (MTJ), three-terminal magnetic domain wall (DW) motion device with Co/Ni multilayer, and three-terminal SOT device with Cu-based channel are described. Integrated circuits with the developed spintronics devices are also reviewed.

引用

页码：684 / 691

页数：8

共 74 条

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[2]

[Anonymous], IEDM

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