GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiency

被引：5

作者：

Zellweger, CM ^{[1
]}

Dorsaz, J

Carlin, JF

Bühlmann, HJ

Stanley, RP

Ilegems, M

机构：

[1] Swiss Fed Inst Technol, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[2] CSEM, Swiss Ctr Elect & Microtechnol, CH-2007 Neuchatel, Switzerland

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 200卷 / 01期

关键词：

D O I：

10.1002/pssa.200303276

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a study on the improvement of the external Quantum Efficiency (QE) of Gallium-Nitride-based Light Emitting Diodes (LEDs) by the use of the Single Mirror (SMLED) design [N.E.J. Hunt et al., Electron. Lett. 28, 2169 (1992)]. Three different substrate emitting LEDs are compared by measurements and simulations. An increase in the external QE by more than a factor of two is demonstrated, due to the enhancement of the Light Extraction Efficiency for the SMLED design. Using the SMLED design leads to values of the ext. QE of 10.9% (in air) and 23.2% (in glycerine, simulating a device in epoxy), while simulations predict Light Extraction Efficiencies (LEE) of 28% and 50% (in air and packaged) respectively, taking into account only the emission through the substrate. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhem.

引用

页码：75 / 78

页数：4

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