The electrical characteristics of sn/methyl-red/p-type Si/Al contacts

被引：126
作者：
Aydin, M. E. [1 ]
Turut, A. [2 ]
机构：
[1] Dicle Univ, Fac Sci & Arts, Dept Phys, Diyarbakir, Turkey
[2] Ataturk Univ, Fac Sci & Arts, Dept Phys, TR-25240 Erzurum, Turkey
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 12期
关键词：
metal-organic-semiconductor contacts; Schottky barrier; heterojunction; interfacial layer; interface states; capacitance-conductance characteristics;
D O I：
10.1016/j.mee.2007.02.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The junction characteristics of the organic compound methyl-red film (2-[4-(dimethylamino)phenylazo]benzoic acid) on a p-type Si substrate have been studied. The current-voltage characteristics of the device have rectifying behavior with a potential barrier formed at the interface. The barrier height and ideality factor values of 0.73 eV and 3.22 for the structure have been obtained from the forward bias current-voltage (I-V) characteristics. The interface state energy distribution and their relaxation time have ranged from 1.68 x 10(12) cm(-2) eV(-1) and 1.68 x 10(-3) s in (0.73-E-v) eV to 1.80 x 10(12) cm(-2) eV(-1) and 5.29 x 10(-5) s in (0.43-E-v) eV, respectively, from the forward bias capacitance-frequency and conductance-frequency characteristics. Furthermore, the relaxation time of the interface states shows an exponential rise with bias from (0.43-E-v) eV towards (0.73-Ev) eV. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：2875 / 2882
页数：8
相关论文
共 51 条
  • [1] [Anonymous], METAL SEMICONDUCTOR
  • [2] The effect of thermal treatment on the characteristic parameters of Ni/-, Ti/- and NiTi alloy n-GaAs Schottky diodes
    Ayyildiz, E
    Türüt, A
    [J]. SOLID-STATE ELECTRONICS, 1999, 43 (03) : 521 - 527
  • [3] The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes
    Biber, M
    Çakar, M
    Türüt, A
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (10) : 575 - 579
  • [4] Density functional calculations of structures, vibrational frequencies, and normal modes of trans- and cis-azobenzene
    Biswas, N
    Umapathy, S
    [J]. JOURNAL OF PHYSICAL CHEMISTRY A, 1997, 101 (30) : 5555 - 5566
  • [5] Improvement of the impedance measurement reliability by some new experimental and data treatment procedures applied to the behavior of copper in neutral chloride solutions containing small heterocycle molecules
    Blajiev, OL
    Breugelmans, T
    Pintelon, R
    Hubin, A
    [J]. ELECTROCHIMICA ACTA, 2006, 51 (8-9) : 1403 - 1412
  • [6] Ab initio derivation of the electronic structure properties across the Cu-Cu2O interface
    Blajiev, OL
    Hubin, A
    [J]. ELECTROCHIMICA ACTA, 2005, 50 (21) : 4297 - 4307
  • [7] Organic heterostructures for electronic and photonic devices
    Bohler, A
    Urbach, P
    Schobel, J
    Dirr, S
    Johannes, HH
    Wiese, S
    Ammermann, D
    Kowalsky, W
    [J]. PHYSICA E, 1998, 2 (1-4): : 562 - 572
  • [8] Experimental investigation and simulation of hybrid organic/inorganic Schottky diodes
    Bolognesi, A
    Di Carlo, A
    Lugli, P
    Kampen, T
    Zahn, DRT
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (38) : S2719 - S2728
  • [9] The conductance and capacitance-frequency characteristics of the organic compound (pyronine-B)/p-Si structures
    Çakar, M
    Türüt, A
    [J]. SYNTHETIC METALS, 2003, 138 (03) : 549 - 554
  • [10] The nonpolymeric organic compound (pyronine-B)/p-type silicon/Sn contact barrier devices
    Çakar, M
    Onganer, Y
    Türüt, A
    [J]. SYNTHETIC METALS, 2002, 126 (2-3) : 213 - 218
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