The electrical characteristics of sn/methyl-red/p-type Si/Al contacts

被引：126

作者：

Aydin, M. E. ^{[1
]}

Turut, A. ^{[2
]}

机构：

[1] Dicle Univ, Fac Sci & Arts, Dept Phys, Diyarbakir, Turkey

[2] Ataturk Univ, Fac Sci & Arts, Dept Phys, TR-25240 Erzurum, Turkey

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 12期

关键词：

metal-organic-semiconductor contacts; Schottky barrier; heterojunction; interfacial layer; interface states; capacitance-conductance characteristics;

D O I：

10.1016/j.mee.2007.02.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The junction characteristics of the organic compound methyl-red film (2-[4-(dimethylamino)phenylazo]benzoic acid) on a p-type Si substrate have been studied. The current-voltage characteristics of the device have rectifying behavior with a potential barrier formed at the interface. The barrier height and ideality factor values of 0.73 eV and 3.22 for the structure have been obtained from the forward bias current-voltage (I-V) characteristics. The interface state energy distribution and their relaxation time have ranged from 1.68 x 10(12) cm(-2) eV(-1) and 1.68 x 10(-3) s in (0.73-E-v) eV to 1.80 x 10(12) cm(-2) eV(-1) and 5.29 x 10(-5) s in (0.43-E-v) eV, respectively, from the forward bias capacitance-frequency and conductance-frequency characteristics. Furthermore, the relaxation time of the interface states shows an exponential rise with bias from (0.43-E-v) eV towards (0.73-Ev) eV. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：2875 / 2882

页数：8

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