Transistor heater for microhotplate-based metal-oxide microsensors

被引：12
作者：
Graf, M [1 ]
Müller, SK [1 ]
Barrettino, D [1 ]
Hierlemann, A [1 ]
机构：
[1] Swiss Fed Inst Technol, Phys Elect Lab, CH-8093 Zurich, Switzerland
来源：
IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 05期
关键词：
metal-oxide gas sensor; microhotplate; MOSFET heater;
D O I：
10.1109/LED.2005.846899
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A transistor-type heater is presented, which has been developed to regulate the temperature of microhotplates in industrial CMOS technology. The heating transistor preserves its transistor characteristics up to 350 degrees C and shows almost linear heating characteristics at temperatures higher than 100 degrees C. The temperature can be controlled by adjusting the transistor source/gate voltage. Sensor measurements for CO are presented in two different sensing modes: chemoresistive readout and calorimetric readout by means of monitoring changes in the source/gate voltage which is required to keep the microhotplate temperature at the preset value. The device is part of an approach to monolithically integrate metal-oxide chemical sensors with circuitry.
引用
收藏
页码：295 / 297
页数：3
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