A W-Band Low Loss, High Power SPDT Switch Using Reverse Saturated 0.13 μm SiGe HBTs

被引：0

作者：

Zhou, Peigen ^{[1
]}

Dong, Haoyi ^{[1
]}

Peng, Zhigang ^{[1
]}

Chen, Jixin ^{[1
]}

Hou, Debin ^{[1
]}

Yan, Pinpin ^{[1
]}

Xiang, Yu ^{[2
]}

Hong, Wei ^{[1
]}

机构：

[1] Southeast Univ, State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China

[2] Misic Microelect, 9 Mozhou Eastern Rd, Nanjing 211111, Peoples R China

来源：

2018 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2018年

关键词：

Isolation-boosting inductance; SiGe BiC-MOS; substrate contact; SPDT; W-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a sigle-pole double-throw (SPDT) switch using a 0.13 mu m reverse saturated SiGe HBTs. The switch is based on lambda/4 transmission line and the performance of insertion loss and isolation is improved by adding a small area of substrate contacts around the NPN transistors and an isolation-boosting inductance between the collector and emitter, respectively. A measured insertion loss of 1.4-1.6 dB is achieved at 81-98 GHz and < 2.5 dB in the whole W-band frequencies. The measured output port-to-port isolation is > 25 dB at 78-97 GHz and > 20dB in W-band frequencies. The return loss is better than 10 dB at 75-102 GHz. To the best of the authors' knowledge, the proposed switch demonstrates the lowest insertion loss in the silicon-based SPDT switches in W-band frequencies.

引用

页码：118 / 120

页数：3

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