Effects of irradiation damage on the back-scattering of electrons: Silicon-implanted silicon

被引：8

作者：

Nasdala, Lutz

Kronz, Andreas ^{[1
]}

Grambole, Dieter

Trullenque, Ghislain

机构：

[1] Univ Vienna, Inst Mineral & Kristallog, A-1090 Vienna, Austria

[2] Univ Gottingen, Geowissensch Zentrum, D-37077 Gottingen, Germany

[3] Forschungzentrum Dresden Rossedorf, Inst Ionenstrahlphys & Mat Forsch, D-01328 Dresden, Germany

[4] Johannes Gutenberg Univ Mainz, Inst Geowissensch, D-55099 Mainz, Germany

来源：

AMERICAN MINERALOGIST | 2007年 / 92卷 / 10期

关键词：

back-scattered electron images; Raman spectroscopy; electron back-scatter diffraction; radiation damage; silicon;

D O I：

10.2138/am.2007.2648

中图分类号：

P3 [地球物理学]; P59 [地球化学];

学科分类号：

0708 ; 070902 ;

摘要：

Radiation damage in a (initially crystalline) silicon wafer was generated by microbeam ion implantation with 600 keV Si+ ions (fluence 5 x 10(14) ions/cm(2)). To produce micro-areas with different degrees of damage, 14 implantations at different temperatures (between 23 and 225 degrees C) were done. The structural state of irradiated areas was characterized using Raman spectroscopy and electron back-scatter diffraction. All irradiated areas showed strong structural damage in surficial regions (estimated depth < 1 mu m), and at implant substrate temperatures of below 130 degrees C, the treatment caused complete amorphization. Back-scattered electron (BSE) image intensities correlate with the degree of irradiation damage; all irradiated areas were higher in BSE than the surrounding host. Because there were no variations in the chemical composition and, with that, no <(Z)over bar> contrast in our sample, this observation again supports the hypothesis that structural radiation damage may strongly affect BSE images of solids.

引用

页码：1768 / 1771

页数：4

共 17 条

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