Dependence of Process Characteristics on Atomic-Step Density in Catalyst-Referred Etching of 4H-SiC(0001) Surface

被引：27

作者：

Okamoto, Takeshi ^{[1
]}

Sano, Yasuhisa ^{[1
]}

Tachibana, Kazuma ^{[1
]}

Arima, Kenta ^{[1
]}

Hattori, Azusa N. ^{[2
]}

Yagi, Keita ^{[3
]}

Murata, Junji ^{[1
]}

Sadakuni, Shun ^{[1
]}

Yamauchi, Kazuto ^{[1
,2
]}

机构：

[1] Osaka Univ, Dept Precis Sci & Technol, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Osaka Univ, Grad Sch Engn, Res Ctr Ultraprecis Sci & Technol, Suita, Osaka 5650871, Japan

[3] Ebara Corp, Kanagawa 2518502, Japan

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 04期

关键词：

SiC; Planarization; Polishing; Etching; Catalyst; FREE PLANARIZATION; SILICON-CARBIDE;

D O I：

10.1166/jnn.2011.3917

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Catalyst-referred etching (CARE) is a novel abrasive-free planarization method. CARE-processed 4H-SiC(0001) surfaces are extremely flat and undamaged over the whole wafer. They consist of single-bilayer-height atomic steps and atomically flat terraces. This suggests that the etching properties depend principally on the atomic-step density of the substrate surface. We used on-axis and 8 degrees off-axis substrates to investigate the processing characteristics that affect the atomic-step density of these substrates. We found a strong correlation between the removal rate and the atomic-step density of the two substrates. For the on-axis substrate, the removal rate increased with increasing surface roughness, which increases with an increasing atomic-step density. The removal rate ratio is approximately the same as the atomic-step density ratio of the two substrates.

引用

页码：2928 / 2930

页数：3

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