Fabrication and characterization of reactively sputtered TaN thin-film resistors for millimeter wave applications

被引：11
|
作者：
Mellberg, A [1 ]
Nicols, SP [1 ]
Rorsman, N [1 ]
Zirath, H [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 11期
关键词：
D O I：
10.1149/1.1804985
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A tantalum nitride (TaN) thin-film resistor (TFR) lift-off process was developed by reactively sputtering TaN from a pure Ta metal target. The films were deposited at a rate of approximately 3 angstrom/s using a N-2/Ar ratio of 0.22 at 5 mTorr and 100 W of dc power. TFRs were fabricated on silicon and semi-insulating InP with reproducible resistances of 80-85 Omega/square at thicknesses of 550-700 angstrom using a lift-off technique. Resistors fabricated on semi-insulating InP utilizing microstrip technology were characterized by S-parameter measurements up to 67 GHz. A model, based on a lossy transmission line, described the TFRs with good accuracy. (C) 2004 The Electrochemical Society.
引用
收藏
页码：G261 / G263
页数：3
相关论文
共 50 条
  • [1] Investigation of reactively sputtered TaN thin-film resistors for microwave photonic applications
    Erofeev E.V.
    Polyntsev E.S.
    Ishutkin S.V.
    Applied Physics, 2021, (05): : 93 - 98
  • [2] EFFECTS OF DEPOSITION TEMPERATURES ON TA THIN-FILM RESISTORS REACTIVELY SPUTTERED IN OXYGEN
    HARDY, WR
    MILLS, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 303 - 306
  • [3] GROWTH AND CHARACTERIZATION OF REACTIVELY SPUTTERED THIN-FILM PLATINUM OXIDES
    MCBRIDE, JR
    GRAHAM, GW
    PETERS, CR
    WEBER, WH
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) : 1596 - 1604
  • [4] Characterisation of reactively sputtered silicon oxide for thin-film transistor fabrication
    Jun, SI
    McKnight, TE
    Melechko, AV
    Simpson, ML
    Rack, PD
    ELECTRONICS LETTERS, 2005, 41 (14) : 822 - 823
  • [5] TA THIN-FILM RESISTORS REACTIVELY SPUTTERED ONTO SUBSTRATES MOUNTED ON A ROTATING CAROUSEL
    HARDY, WR
    TAM, C
    JOURNAL OF MATERIALS SCIENCE, 1974, 9 (03) : 438 - 446
  • [6] Characterization and reliability of TaN thin film resistors
    Lee, T
    Watson, K
    Chen, F
    Gill, J
    Harmon, D
    Sullivan, T
    Li, BZ
    2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 502 - 508
  • [7] ELECTRICAL AND STRUCTURAL-PROPERTIES OF NICR THIN-FILM RESISTORS REACTIVELY SPUTTERED IN O2
    HARDY, WR
    MURTI, DK
    THIN SOLID FILMS, 1974, 20 (02) : 345 - 362
  • [8] A NEW MATERIAL FOR THE FABRICATION OF THIN-FILM RESISTORS
    ANGADI, MA
    SHIVAPRASAD, SM
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (08) : 739 - 742
  • [9] THIN-FILM OXYGEN SENSORS MADE OF REACTIVELY SPUTTERED ZNO
    LAMPE, U
    MULLER, J
    SENSORS AND ACTUATORS, 1989, 18 (3-4): : 269 - 284
  • [10] REACTIVELY SPUTTERED MNO2 FOR THIN-FILM CAPACITORS
    CASH, JH
    CLARK, RS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : C58 - &
12345