Etching behavior of titanium silicide films in HF-based solution

被引：0

作者：

Datta, A ^{[1
]}

Umapathi, B ^{[1
]}

Basu, S ^{[1
]}

Kal, S ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Titanium Silicide is the most extensively used refractory metal silicide having resistivity around 15 mu Omega-cm. In the present work, TiSi2 has been prepared by two different methods and the silicide films are characterized by sheet resistance measurement and XRD. Since HF-based solution is routinely used in integrated circuit processing the etch behaviour of TiSi2 has been studied in HP-based solution and results are interpreted.

引用

页码：1165 / 1168

页数：4