Superconductivity in Ti4O7 and γ-Ti3O5 films

被引：52

作者：

Yoshimatsu, K. ^{[1
]}

Sakata, O. ^{[2
,3
]}

Ohtomo, A. ^{[1
,3
]}

机构：

[1] Tokyo Inst Technol, Dept Chem Sci & Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan

[2] NIMS, SPring 8, Synchrotron Xray Stn, 1-1-1 Koto, Sayo, Hyogo 6795148, Japan

[3] Tokyo Inst Technol, Mat Res Ctr Element Strategy MCES, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268503, Japan

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

基金：

日本学术振兴会;

关键词：

METAL-INSULATOR TRANSITIONS; PRESSURE; OXIDE;

D O I：

10.1038/s41598-017-12815-4

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Titanium dioxide is one of the most popular compounds among simple oxides. Except for the fully oxidized titanate, titanium oxides have partially filled d states and their exotic properties have captured attention. Here, we report on the discovery of superconductivity in Ti4O7 and gamma-Ti3O5 in a thin film form. The epitaxial Ti4O7 and gamma-Ti3O5 thin films were grown using pulsed-laser deposition on (LaAlO3) 0.3-(SrAl0.5Ta0.5O3)(0.7) and alpha-Al2O3 substrates, respectively. The highest superconducting transition temperatures are 3.0 K and 7.1 K for Ti4O7 and gamma-Ti3O5, respectively. The mechanism behind the superconductivity is discussed on the basis of electrical measurements and previous theoretical predictions. We conclude that the superconductivity arises from unstabilized bipolaronic insulating states with the assistance of oxygen non-stoichiometry and epitaxial stabilization.

引用

页数：6

共 22 条

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