A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology

被引：5

作者：

Vogelsang, Florian ^{[1
]}

Starke, David ^{[1
]}

Wittemeier, Jonathan ^{[1
]}

Ruecker, Holger ^{[2
]}

Pohl, Nils ^{[1
,3
]}

机构：

[1] Ruhr Univ Bochum, Inst Integrated Syst, D-44801 Bochum, Germany

[2] IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Oder, Germany

[3] Fraunhofer Inst High Frequency Phys & Radar Tech, D-53343 Wachtberg, Germany

来源：

2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) | 2020年

关键词：

VCO; frequency doubler; power amplifier; signal source; SiGe BiCMOS; mm-Wave; efficiency; TRANSCEIVER;

D O I：

10.1109/BCICTS48439.2020.9392945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a highly-efficient signal source for radar applications at 120 GHz and 240 GHz in a 130-nm SiGe-technology. A low DC-Power consumption of only 78 mW - respectively 264 mW is needed to provide as much as 7.1 dBm (7 dBm) output power at RF-frequencies. The resulting DC-to-RF efficiency is 6.58 (1.88) %. For the signal generation, a Colpitts VCO followed by a bootstrapped gilbert doubler and two power amplifier stages are used at a supply voltage of 33 V. The used technology offers new HBTs with an f(t) of around 470 GHz and f(max) of 700 GHz. For the use in radar applications, the VCO frequency can be swept with a bandwidth of 163 GHz, while the center frequency can be adjusted using laser-fuses.

引用

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