Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

被引：25
作者：
Beukers, J. N. [1 ]
Kleibeuker, J. E.
Koster, G.
Blank, D. H. A.
Rijnders, G.
Hilgenkamp, H.
Brinkman, A.
机构：
[1] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 18期
关键词：
EuO; Ferromagnetic insulators; Pulsed laser deposition; X-ray photoelectron spectroscopy; ELECTRON-SPIN POLARIZATION; TUNNEL-JUNCTIONS; FIELD; ZERO;
D O I：
10.1016/j.tsf.2010.04.071
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have grown EuO thin films on silicon [001] and yttrium aluminate [110] from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10(-6)-10(-5) mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate [110]. Magnetization measurements confirm the stoichiometry of the film. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：5173 / 5176
页数：4
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