Study of annealing and exchange bias effects in PtMn based magnetic tunnel junction system

被引：5

作者：

Peng, TY ^{[1
]}

Yao, YD ^{[1
]}

Chen, SY ^{[1
]}

Wang, YH ^{[1
]}

Chen, WC ^{[1
]}

Gao, MJ ^{[1
]}

Tang, DD ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

SECOND SEEHEIM CONFERENCE ON MAGNETISM, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200405519

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The crystallization structure and thickness of PtMn layer in a magnetic tunnel junction system are important factors to improve its exchange bias effect. This study shows that the PtMn layer could be changed from a FCC (111) structure to a FCT (111) structure after annealing above 270 degreesC. The minimum thickness of PtMn layer is found to be 10 nm for exchange coupling effect to be occurred in our MTJ system. The magnetic exchange effect between PtMn and SAF layers is near 4,300 Oe. Annealing temperatures can be higher than 400 degreesC for samples without patterning; however, temperature at 275 degreesC is too high for samples after patterning. This may be due to the breakdown of edges of the patterned samples as well as the complicated environments around the patterned samples. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3628 / 3631

页数：4

共 6 条

[1]

FARROW RFC, 1997, J APPL PHYS, V81, P8

[2] Thermal stability of pinned layer in PtMn based synthetic spin-valve [J].

Nagai, H ;

Ueno, M ;

Hikami, F ;

Sawasaki, T ;

Tanoue, S .

IEEE TRANSACTIONS ON MAGNETICS, 1999, 35 (05) :2964-2966

[3] Exchange anisotropy and micromagnetic properties of PtMn/NiFe bilayers [J].

Pokhil, T ;

Linville, E ;

Mao, SN .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6588-6590

[4] PtMn single and dual spin valves with synthetic ferrimagnet pinned layers [J].

Saito, M ;

Hasegawa, N ;

Koike, F ;

Seki, H ;

Kuriyama, T .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4928-4930

[5] Thermal stability of PtMn based synthetic spin valves using thin oxide layer [J].

Sugita, Y ;

Kawawake, Y ;

Satomi, M ;

Sakakima, H .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6919-6921

[6]

YOUNG KK, 2001, J APPL PHYS, V89, P6907

← 1 →