Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1-xMgxO3-δ

被引：5

作者：

Li, Li ^{[1
]}

Ikeda, Akihiro ^{[1
]}

Asano, Tanemasa ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 10期

关键词：

4H SILICON-CARBIDE; THERMAL-OXIDATION; ADSORBED OXYGEN; METHANE; DEFECTS; DIODES;

D O I：

10.7567/JJAP.55.108001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thermal oxidation method with SrTi1-xMgxO3-delta used as an oxidation catalyst is proposed to oxidize the 4H-SiC surface at low temperatures. The rate constant for the interfacial reaction of the 4H-SiC(0001) Si-face at 800 degrees C is enhanced by approximately two orders of magnitude from that of conventional dry oxidation. The method enables the production of a gate SiO2 layer of a MOSFET at temperatures below 900 degrees C. Electrical characterization of the MOS interface suggests that the catalytic oxidation produces similar interface state densities to those produced by conventional dry oxidation in the energy range of 0.2-0.5 eV from the conduction band edge at 1300 degrees C. (C) 2016 The Japan Society of Applied Physics

引用

页数：3

共 27 条

[11]

Kita K., 2015, 16 INT C SIL CARB RE

[12] Ionization rates and critical fields in 4H silicon carbide [J].

Konstantinov, AO ;

Wahab, Q ;

Nordell, N ;

Lindefelt, U .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :90-92

[13] Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1-xMgxO3-δ [J].

Li, Li ;

Ikeda, Akihiro ;

Asano, Tanemasa .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)

[14] Oxidative coupling of methane on SrTi1-xMgxO2-delta catalysts: Formation of oxide ion defects and the effect of oxidizing reagents on catalytic activity and selectivity [J].

Li, XH ;

Tomishige, K ;

Fujimoto, K .

KAGAKU KOGAKU RONBUNSHU, 1995, 21 (06) :1024-1031

[15]

Nicollian E. H., 1982, MOS METAL OXIDE SEMI

[16] Removal of near-interface traps at SiO2/4H-SiC (0001) interfaces by phosphorus incorporation [J].

Okamoto, Dai ;

Yano, Hiroshi ;

Hatayama, Tomoaki ;

Fuyuki, Takashi .

APPLIED PHYSICS LETTERS, 2010, 96 (20)

[17] Reduction of interface trap density in 4H-SiC MOS by high-temperature oxidation [J].

Okuno, E ;

Amano, S .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :989-992

[18] Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance [J].

Peters, D ;

Schorner, R ;

Holzlein, KH ;

Friedrichs, P .

APPLIED PHYSICS LETTERS, 1997, 71 (20) :2996-2997

[19] 150 A SiC V-groove trench gate MOSFET with 6 x 6 mm2 chip size on a 150 mm C-face in-house epitaxial wafer [J].

Saitoh, Yu ;

Itoh, Hironori ;

Wada, Keiji ;

Sakai, Mitsuhiko ;

Horii, Taku ;

Hiratsuka, Kenji ;

Tanaka, So ;

Mikamura, Yasuki .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)

[20] Development of a novel 1200-V-class 4H-SiC implantation-and-epitaxial trench MOSFET with low on-resistance [J].

Shiomi, Hiromu ;

Kitai, Hidenori ;

Tamaso, Hideto ;

Fukuda, Kenji .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)

← 1 2 3 →