Phase change materials in non-volatile storage

被引：153

作者：

Ielmini, Daniele ^{[1
,2
]}

Lacaita, Andrea L. ^{[1
,2
,3
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Politecn Milan, IU NET, I-20133 Milan, Italy

[3] IFN CNR, Milan, Italy

来源：

MATERIALS TODAY | 2011年 / 14卷 / 12期

关键词：

STRUCTURAL RELAXATION; CHANGE MEMORY; HOPPING CONDUCTION; CELL; CRYSTALLIZATION; RESISTANCE; DENSITY; STATES; FILMS; PERFORMANCE;

D O I：

10.1016/S1369-7021(11)70301-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Over the last several decades, processors have improved much faster than storage components(1). Memory has therefore become the most frequent limiting factor of a system's performance, while the celebrated convergence of consumer, computer, and communication electronics has exponentially increased the need for increased memory size. In the future, additional issues will arise as a multitude of heterogeneous systems will spread integrated intelligence to all manner of products. Pressure will certainly grow in cost and performance optimization, as well as flexibility and integration requirements. From this perspective, novel solutions provided by emerging memory technologies are expected to become essential to meet the cost, bandwidth, and power efficiency requirements of future memory systems.

引用

页码：600 / 607

页数：8

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