Phase change materials in non-volatile storage

被引:147
作者
Ielmini, Daniele [1 ,2 ]
Lacaita, Andrea L. [1 ,2 ,3 ]
机构
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
[2] Politecn Milan, IU NET, I-20133 Milan, Italy
[3] IFN CNR, Milan, Italy
关键词
STRUCTURAL RELAXATION; CHANGE MEMORY; HOPPING CONDUCTION; CELL; CRYSTALLIZATION; RESISTANCE; DENSITY; STATES; FILMS; PERFORMANCE;
D O I
10.1016/S1369-7021(11)70301-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the last several decades, processors have improved much faster than storage components(1). Memory has therefore become the most frequent limiting factor of a system's performance, while the celebrated convergence of consumer, computer, and communication electronics has exponentially increased the need for increased memory size. In the future, additional issues will arise as a multitude of heterogeneous systems will spread integrated intelligence to all manner of products. Pressure will certainly grow in cost and performance optimization, as well as flexibility and integration requirements. From this perspective, novel solutions provided by emerging memory technologies are expected to become essential to meet the cost, bandwidth, and power efficiency requirements of future memory systems.
引用
收藏
页码:600 / 607
页数:8
相关论文
共 103 条
[1]   THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS [J].
ADLER, D ;
SHUR, MS ;
SILVER, M ;
OVSHINSKY, SR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3289-3309
[2]   MECHANISM OF THRESHOLD SWITCHING IN AMORPHOUS ALLOYS [J].
ADLER, D ;
HENISCH, HK ;
MOTT, N .
REVIEWS OF MODERN PHYSICS, 1978, 50 (02) :209-220
[3]  
AHN SJ, 2004, IEEE IEDM, P10
[4]   An 8Mb demonstrator for high-density 1.8V phase-change memories [J].
Bedeschi, F ;
Resta, C ;
Khouri, O ;
Buda, E ;
Costa, L ;
Ferraro, M ;
Pellizzer, F ;
Ottogalli, F ;
Pirovano, A ;
Tosi, M ;
Bez, R ;
Gastaldi, R ;
Casagrande, G .
2004 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2004, :442-445
[5]   A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage [J].
Bedeschi, Ferdinando ;
Fackenthal, Rich ;
Resta, Claudio ;
Donze, Enzo Michele ;
Jagasivamani, Meenatchi ;
Buda, Egidio Cassiodoro ;
Pellizzer, Fabio ;
Chow, David W. ;
Cabrini, Alessandro ;
Calvi, Giacomo Matteo Angelo ;
Faravelli, Roberto ;
Fantini, Andrea ;
Torelli, Guido ;
Mills, Duane ;
Gastaldi, Roberto ;
Casagrande, Giulio .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (01) :217-227
[6]  
BENEVENTI GB, 2010, P IEEE INT MEM WORKS, P21
[7]   Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories [J].
Boniardi, Mattia ;
Ielmini, Daniele ;
Tortorelli, Innocenzo ;
Redaelli, Andrea ;
Pirovano, Agostino ;
Allegra, Mario ;
Magistretti, Michele ;
Bresolin, Camillo ;
Erbetta, Davide ;
Modelli, Alberto ;
Varesi, Enrico ;
Pellizzer, Fabio ;
Lacaita, Andrea L. ;
Bez, Roberto .
SOLID-STATE ELECTRONICS, 2011, 58 (01) :11-16
[8]  
BORG H, 2001, MRS S P, V674
[9]   Dependence of resistance drift on the amorphous cap size in phase change memory arrays [J].
Braga, Stefania ;
Cabrini, Alessandro ;
Torelli, Guido .
APPLIED PHYSICS LETTERS, 2009, 94 (09)
[10]   Novel lithography-independent pore phase change memory [J].
Breitwisch, M. ;
Nirschl, T. ;
Chen, C. F. ;
Zhu, Y. ;
Lee, M. H. ;
Lamorey, M. ;
Burr, G. W. ;
Joseph, E. ;
Schrott, A. ;
Philipp, J. B. ;
Cheek, R. ;
Happ, T. D. ;
Chen, S. H. ;
Zaidi, S. ;
Flaitz, P. ;
Bruley, J. ;
Dasaka, R. ;
Rajendran, B. ;
Rossnagel, S. ;
Yang, M. ;
Chen, Y. C. ;
Bergmann, R. ;
Lung, H. L. ;
Lam, C. .
2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, :100-+