Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy

被引：19
作者：
Wang, L. [1 ]
Rastelli, A. [1 ]
Kiravittaya, S. [1 ]
Songmuang, R. [1 ]
Schmidt, O. G. [1 ]
Krause, B. [2 ]
Metzger, T. H. [2 ]
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France
来源：
NANOSCALE RESEARCH LETTERS | 2006年 / 1卷 / 01期
关键词：
lateral quantum-dot molecules; quantum dots; quantum dot composition; self-assembled growth;
D O I：
10.1007/s11671-006-9003-y
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are aligned along the [1 (1) over bar0] direction. The relative number of isolated single quantum dots (QDs) is substantially reduced by performing the growth on GaAs surfaces containing stepped mounds. Surface morphology and X-ray measurements suggest that the strain produced by InGaAs-filled nanoholes superimposed to the strain relaxation at the step edges are responsible for the improved QDM properties. QDMs are Ga-richer compared to single QDs, consistent with strain-enhanced intermixing. The high optical quality of single QDMs is probed by micro-photoluminescence spectroscopy in samples with QDM densities lower than 10(8) cm(-2).
引用
收藏
页码：74 / 78
页数：5
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