The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol-gel technology and annealing

被引：24

作者：

Hsieh, P. T. ^{[1
]}

Chen, Y. C. ^{[2
]}

Lee, M. S. ^{[3
]}

Kao, K. S. ^{[4
]}

Kao, M. C. ^{[5
]}

Houng, M. P. ^{[6
]}

机构：

[1] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 886701, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

[3] Natl Kaohsiung Univ Appl Sci, Dept Elect Engn, Kaohsiung, Taiwan

[4] Shu Te Univ, Dept Comp & Commun, Kaohsiung, Taiwan

[5] Hsiuping Inst Technol, Dept Elect Engn, Taichung, Taiwan

[6] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2008年 / 47卷 / 01期

关键词：

ZnO; sol-gel processes; annealing; UV;

D O I：

10.1007/s10971-008-1747-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO thin films were successfully deposited on SiO2/Si substrate using the sol-gel technique and annealed in various annealing atmospheres at 900 C by rapid thermal annealing (RTA). X-ray diffraction revealed the (002) texture of ZnO thin films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the grains of the ZnO thin film were enlarged and its surface was smoothed upon annealing in oxygen. PL measurement revealed two ultraviolet (UV) luminescence bands at 375 and 380 nm. The intensity of the emission peak at 380 nm became stronger as the concentration of oxygen in the annealing atmosphere increased. The X-ray photoelectron spectrum (XPS) demonstrated that a more stoichiometric ZnO thin film was obtained upon annealing in oxygen and more excitons were generated from the radiative recombination carriers consistently. Additionally, the UV intensity increased with the thickness of ZnO thin film.

引用

页码：1 / 6

页数：6

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