Broadband and omnidirectional antireflection employing disordered GaN nanopillars

被引：65

作者：

Chiu, C. H. ^{[1
,2
]}

Yu, Peichen ^{[1
,2
]}

Kuo, H. C. ^{[1
,2
]}

Chen, C. C. ^{[1
,2
]}

Lu, T. C. ^{[1
,2
]}

Wang, S. C. ^{[1
,2
]}

Hsu, S. H. ^{[3
]}

Cheng, Y. J. ^{[3
]}

Chang, Y. C. ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[3] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 12期

关键词：

D O I：

10.1364/OE.16.008748

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Disordered GaN nanopillars of three different heights: 300, 550, and 720 nm are fabricated, and demonstrate broad angular and spectral anti-reflective characteristics, up to an incident angle of 60 degrees and for the wavelength range lambda=300-1800nm. An algorithm based on a rigorous coupled-wave analysis (RCWA) method is developed to investigate the correlations between the reflective characteristics and the structural properties of the nanopillars. The broadband and omnidirectional antireflection arises mainly from the refractive-index gradient provided by nanopillars. Calculations show excellent agreement with the measured reflectivities for both s- and p-polarizations. (c) 2008 Optical Society of America.

引用

页码：8748 / 8754

页数：7

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