Precision d-spacing measurement of GaAs single crystals with synchrotron radiation

被引:1
作者
Okada, Y
Zhang, X
Sugiyama, H
Imai, Y
Rahman, MO
Higashi, Y
Nakayama, K
Fujimoto, H
Yoda, Y
Ando, M
机构
[1] ETL, Tsukuba, Ibaraki 3058568, Japan
[2] KEK, Tsukuba, Ibaraki 3050801, Japan
[3] UT, Bunkyo Ku, Tokyo 1138656, Japan
[4] GUAS, Tsukuba, Ibaraki 3058563, Japan
[5] NRLM, Tsukuba, Ibaraki 3058568, Japan
[6] JASRI, Sayo, Hyogo 6795198, Japan
关键词
monolithic monochromator; high-precision measurements; lattice spacing; GaAs; automatic measurement;
D O I
10.1016/S0168-9002(01)00635-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A wavelength-selective silicon monolithic (+, -, - +) channel-cut monochromator and a system for high-precision measurements of lattice spacing were developed at the Photon Factory BL3C2. A computer program was developed to allow us to measure automatically more than 30 different samples within a single run. The full-width at half-maximum of the rocking curves of a couple of (8 0 0) GaAs reflections is 17-20 arc-sec. Using this system, it is possible to carry out precise lattice spacing measurements of GaAs single crystals with high boron concentrations by the Bond method. The standard deviations for the measurements of one sample were estimated by Deltaa/a= 4 x 10(-8). Anomalous reductions in lattice spacing have been found below a boron concentration of 1 x 10(19) cm(-3). (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1037 / 1040
页数:4
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