Design and Process control of Siemens Poly-silicon CVD Reactor

被引:0
|
作者
Priya, A. Swetha [1 ]
Kumar, S. Vinod [2 ]
Mathew, Sibin K. [3 ]
Kalamdani, Abhinav A. [4 ]
机构
[1] Tessolve Semicond, Bangalore, Karnataka, India
[2] Robert Bosch, Bangalore, Karnataka, India
[3] NAL, Bangalore, Karnataka, India
[4] Sunlux Technol Ltd, Photovolta & Controls, Bangalore, Karnataka, India
来源
2015 CONFERENCE ON POWER, CONTROL, COMMUNICATION AND COMPUTATIONAL TECHNOLOGIES FOR SUSTAINABLE GROWTH (PCCCTSG) | 2015年
关键词
Chemical Vapor Deposition(CVD); Human Machine Interface(HMI); Siemens process; Solar-grade silicon; CHEMICAL-VAPOR-DEPOSITION;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
The novelty in this paper is to develop a process control for the poly-silicon CVD reactor to achieve optimum productivity of Poly-silicon seed by controlling the process parameters. The production of ingot is done through Siemens process of decomposing Trichlorosilane by Chemical Vapor Deposition on slim tungsten rods. The hardware architecture proposed monitors and controls the systematic sequential stages furnishing dynamics of the plant at a high temperature around 1050 degrees C-1100 degrees C. The HMI communicates through NI's LabVIEW 8.6 package, alarming the user with Process mimic, Report generation, Data and Security management. The plant simulation is realized and verified with LabVIEW 8.6 Version and MATLab 7.5 software tools to obtain the effectiveness of proposed control technique. This GUI based SCADA handles likelihood of fault tolerance, ensuring risk controlled process with optimum productivity of poly-silicon by making system compliant to Industrial standards.
引用
收藏
页码:91 / 96
页数:6
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